Fabrication of three-layer silicon antireflection structures in 200–450 GHz using deep reactive ion etching
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3D Nanopatterning and Nanofabrication: Using Nano-Scalloping Effects in Bosch Deep Reactive Ion Etching
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Figure 1 from A three-step model of black silicon formation in Deep Reactive Ion Etching process | Semantic Scholar
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Micromachines | Free Full-Text | Reduced Etch Lag and High Aspect Ratios by Deep Reactive Ion Etching (DRIE)
![Figure 2 from A three-step model of black silicon formation in Deep Reactive Ion Etching process | Semantic Scholar Figure 2 from A three-step model of black silicon formation in Deep Reactive Ion Etching process | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/b00b80e1c54db42af045e667cb0ffdbdcab9b9d1/1-Figure2-1.png)